Method for preparing gallium nitride single-crystal substrate by prefabricating cracks

• Main Authors: WU JIEJUN, KANG XIANGNING, LIU NANLIU, ZHANG GUOYI, LI WENHUI
• Format: Patent
• Language: Chinese; English
• Published: 04.06.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method for preparing a gallium nitride single-crystal substrate by prefabricating cracks. The method is characterized in that the edge of a foreign substrate is treated by integrating technologies such as crack prefabrication, MOCVD (metal organic chemical vapor deposition), HVPE (High Voltage Paper Electrophoresis) and stress control automatic separation, then an MOCVD growth technology is optimized and is matched with a specific crack prefabrication method, and gaps are introduced into the edges of interfaces of GaN and the foreign substrate and serve as prefabricated cracks; the gradient change of the internal stress of a plane from the edge to the center is realized through the stress control technology; the GaN and the foreign substrate are completely and automatically separated under the effect of certain gradient stress, so that the large-sized complete GaN single-crystal substrate is obtained. By adopting the method, the self-supporting GaN single-crystal substrate is obtaine