Passivating layer of crystalline silicon solar cell and passivating process thereof

• Main Authors: TANG WEITAI, LI AILI, YU QINZHANG, PAN RUOHONG, ZHANG ZHIHONG, LUO WEI, LI WENYAN, LIU JIREN, WAN ZIREN
• Format: Patent
• Language: Chinese; English
• Published: 23.04.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a passivating layer of a crystalline silicon solar cell, which consists of cerium oxide. The passivating process of the passivating layer is characterized in that in the manufacturing process of P-type crystalline silicon or N-type crystalline silicon, after the P-type crystalline silicon is subjected to an anti-reflection film depositing working procedure or the N-type crystalline silicon is subjected to a boron diffusing working procedure or an edge etching working procedure, the P type side on the backlight surface of a P-type crystalline silicon substrate or the P type side on the light facing surface of a N-type crystalline silicon substrate is deposited with a cerium oxide passivating layer by adopting an atomic layer deposition method first, then annealing treatment is carried out, and a SiO2 buffer layer is formed between the passivating layer and the P type side on the backlight surface of the P-type crystalline silicon substrate or the P type side on the light facing surface