Diamond semiconductor system and method

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material (200) having n-type donor atoms (306) and a diamond lattice (304), wherein.16% of the donor atoms (306) contribute conduction electrons with mobility greater tha...

Full description

Saved in:
Bibliographic Details
Main Author KHAN ADAM
Format Patent
LanguageChinese
English
Published 09.04.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material (200) having n-type donor atoms (306) and a diamond lattice (304), wherein.16% of the donor atoms (306) contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice (304) at 100 kPa and 300K. The method (100) of fabricating diamond semiconductors may include the steps of selecting a diamond material (200) having a diamond lattice (304); introducing a minimal amount of acceptor dopant atoms to the diamond lattice (304) to create ion tracks; introducing substitutional dopant atoms to the diamond lattice (304) through the ion tracks; and annealing the diamond lattice (304).
Bibliography:Application Number: CN201280038078