Groove type terminal used for semiconductor power device and preparation method of groove type terminal

• Main Authors: CHU WEILI, TIAN XIAOLI, WU ZHENXING, ZHU YANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 09.04.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a groove type terminal used for a semiconductor power device. The terminal comprises at least one groove; the grooves are located in a substrate of the terminal device; the surface of the terminal is covered with an insulating layer and polysilicon from inside to outside; the peripheries of ports and bottoms of the grooves at a terminal region are provided with P type regions; and the doping type of the type P regions is opposite to the doping type of the substrate. According to the groove type terminal used for the semiconductor power device provided by the invention, the P type regions which enable a protection effect are formed at positions at the peripheries of the grooves where electric fields are intensively centralized, and the doping type of the type P regions is opposite to the doping type of the substrate, and therefore, the reliability of the terminal can be enhanced. With the groove type terminal applied to a power device of a groove type structure, processing steps of the