Method using proton irradiation to prepare terminal structure

• Main Authors: CHU WEILI, WU ZHENXING, ZHAO JIA, ZHU YANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 09.04.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method using proton irradiation to prepare a terminal structure. The method comprises the steps that a main junction and a P type field limiting ring of a chip are prepared on a substrate; an element package structure is prepared on the chip on which the main junction and the P type field limiting ring are formed; after metal electrode deposition is carried out on the chip on which the element package structure is formed, a cathode is formed through etching; after proton implantation is carried out on the chip on which the cathode is formed, an N type well is formed through annealing, and a front process of the chip is finished; and after P type ion implantation is carried out on the back of the chip whose front process is finished to form a P collector, metal electrode deposition is carried out to form an anode and a product is acquired. According to the method using proton irradiation to prepare the terminal structure, which is provided by the invention, voltage withstanding is ens