Method for producing silicon single crystal

• Main Authors: LOBMEYER JOSEF, BRENNINGER GEORG, STEIN WALDEMAR
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for producing silicon single crystal. The method comprises an heating a silicon plate in an inductive manner; making granular silicon on the silicon plate molten; sending the molten silicon to a phase interface through an effuse on the center of the plate, making the silicon single crystal crystallizing on the phase interface; heating a silicon ring an inductive manner before heating the plate in the inductive manner, wherein the ring is disposed on the plate, and electrical resistivity of the ring is lower than that of the plate; and making the ring molten.