Preparation method of metastable-state vanadium dioxide thin film

• Main Authors: CHEN YANFENG, ZHANG SHANTAO, GU ZHENGBIN, LU MINGHUI
• Format: Patent
• Language: Chinese; English
• Published: 12.02.2014
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a preparation method of a metastable-state vanadium dioxide thin film by utilizing a direct-current magnetic sputtering technique. The preparation method comprises the following steps of (1) preparing a metal vanadium target, argon and oxygen, wherein a magnetic sputtering instrument at least comprises two vacuum cavities, namely a sample preparation cavity and a growth cavity, and the growth cavity is vacuumized to be below 4.5*10<-4>; (2) only introducing Ar, setting a sputtering powder, and cleaning oxidized parts and certain pollutant impurities off from the surface of the metal vanadium target; (3) heating a substrate, and maintaining the temperature for about 10 minutes; (4) introducing argon and oxygen, regulating the pressure intensity of the vacuum chamber to be 1 Pa, and starting a radio-frequency sputtering working source for sputtering with the powder of 40 W, wherein the ratio of argon to oxygen is 10:1; (5) after the thin film grows to the required thickness, closing a he