Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces

The invention relates to a domain wall motion in perpendicularly magnetized wires having artificial antiferromangetically coupled multiplayers with engineered interfaces. Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when...

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Bibliographic Details
Main Authors SEE-HUN YANG, LUC THOMAS, STUART STEPHEN PAPWORTH PARKIN
Format Patent
LanguageChinese
English
Published 22.01.2014
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention relates to a domain wall motion in perpendicularly magnetized wires having artificial antiferromangetically coupled multiplayers with engineered interfaces. Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.
Bibliography:Application Number: CN201310283722