Method of forming air space between grooves

• Main Authors: HU MINDA, ZHANG CHENGLONG, FU YALI, ZHANG HAIYANG
• Format: Patent
• Language: Chinese; English
• Published: 25.12.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a method of forming an air space between grooves. A semiconductor substrate is provided in advance. A surface of the semiconductor substrate successively comprises a first etching stop layer and a patterning light resistance glue layer from bottom to top. An exposed area of the patterning light resistance glue layer defines a critical size of each groove. Ultra-low temperature oxide layers are deposited on the first etching stop layer and the surface of the patterning light resistance glue layer and anisotropic etching is performed on the ultra-low temperature oxide layers so as to form sidewall layers which are located on two sides of the patterning light resistance glue layer. Metal copper is deposited and chemical mechanical grinding is performed till that a height is the same with the height of the patterning light resistance glue layer so as to form the metal copper in the grooves. Hole cover layers are formed on the metal copper and the surface of the patterning light resistance g