Semiconductor device and method for manufacturing same
An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR...
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| Main Author | |
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| Format | Patent |
| Language | Chinese English |
| Published |
11.12.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR) are formed in the P-type well (PW). The N-type source region (NS) is formed in a region immediately below the N+-type source region (NNS) and not in a region immediately below the P+-type impurity region (BCR), and the P+-type impurity region (BCR) is directly connected to the P-type well (PW). |
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| AbstractList | An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR) are formed in the P-type well (PW). The N-type source region (NS) is formed in a region immediately below the N+-type source region (NNS) and not in a region immediately below the P+-type impurity region (BCR), and the P+-type impurity region (BCR) is directly connected to the P-type well (PW). |
| Author | KUBO SHUNJI |
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| Notes | Application Number: CN2012813855 |
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| RelatedCompanies | RENESAS ELECTRONICS CORPORATION |
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| Snippet | An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device and method for manufacturing same |
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