Semiconductor device and method for manufacturing same

An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR...

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Bibliographic Details
Main Author KUBO SHUNJI
Format Patent
LanguageChinese
English
Published 11.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An N-type well (NW) is formed to a predetermined depth from the principal surface in a semiconductor substrate (SUB), and a P-type well (PW) and an N-type drain region (ND) are formed in the N-type well. An N-type source region (NS), an N+-type source region (NNS), and a P+-type impurity region (BCR) are formed in the P-type well (PW). The N-type source region (NS) is formed in a region immediately below the N+-type source region (NNS) and not in a region immediately below the P+-type impurity region (BCR), and the P+-type impurity region (BCR) is directly connected to the P-type well (PW).
Bibliography:Application Number: CN2012813855