Complementary darlington emitter follower with improved switching speed and improved cross-over control and increased output voltage

In one embodiment, an apparatus includes a first transistor where the base of the first transistor is coupled to an input node. A second transistor is provided where the emitter of the first transistor is coupled to the base of the second transistor and the emitter of the second transistor is couple...

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Bibliographic Details
Main Author CASEY DAVID NEIL
Format Patent
LanguageChinese
English
Published 04.12.2013
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Summary:In one embodiment, an apparatus includes a first transistor where the base of the first transistor is coupled to an input node. A second transistor is provided where the emitter of the first transistor is coupled to the base of the second transistor and the emitter of the second transistor is coupled to an output node. A third transistor is provided where the base of the third transistor is coupled to the input node. A fourth transistor is provided where the emitter of the third transistor is coupled to the base of the fourth transistor and the emitter of the fourth transistor is coupled to the output node and the base of the second transistor is coupled to the base of the fourth transistor. The base of the second transistor is coupled to the base of the fourth transistor through a shorting link.
Bibliography:Application Number: CN201180061402