Stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and manufacturing method thereof

• Main Authors: YANG NENGHUI, LIN JUNRONG
• Format: Patent
• Language: Chinese; English
• Published: 30.10.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention provides a stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and a manufacturing method of the stack-based CZTSSe thin film solar cell. The manufacturing method of the stack-based CZTSSe thin film solar cell sequentially includes: sequentially forming a sulfide layer, a cuprous selenide layer and a zinc stannide layer on a back electron layer, manufacturing a selenide layer containing sulfur compounds and a selenium sulfide solar energy absorbing layer after selenylation and sulfuration, and depositing an n-type buffering layer and a top electron layer to manufacture the stack-based CZTSSe thin film solar cell, wherein the selenium sulfide solar energy absorbing layer comprises a low-energy-gap copper zinc tin selenide (CZTSe) layer arranged between two high-energy-gap CZTSSe layers in a clamping mode to form a stack-based solar energy absorbing layer. Besides, the invention further provides the stack-based CZTSSe thin film solar cell. Due to the fact that the stack-based