Method for epitaxial growth of III nitride semiconductor material on silicon substrate

• Main Authors: HU JIANNAN, LUO YI, NIU LANG, WANG LAI, HAO ZHIBIAO
• Format: Patent
• Language: Chinese; English
• Published: 21.08.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for epitaxial growth of an III nitride semiconductor material on a silicon substrate. The method comprises the following steps of forming a crystalline state Si3N4 layer on the surface of the silicon substrate firstly; then introducing an aluminum source so as to convert the crystalline state Si3N4 layer into an AlN (aluminum nitride) nucleating layer; and finally conducting epitaxial growth of the III nitride semiconductor material on the AlN nucleating layer. According to the method, the crystalline state Si3N4 layer is formed by nitriding the surface of the silicon substrate, and the AlN nucleating layer is formed by aluminizing of the crystalline state Si3N4 layer, so that the problem of lattice mismatch between the silicon substrate and the III nitride semiconductor material is solved, and the epitaxial growth of high quality III nitride semiconductor material on the silicon substrate is realized. The method for epitaxial growth of the III nitride semiconductor material