Metal-halide-doped organic hole transporting layer, and preparation method and application thereof

• Main Authors: WANG HENG, RONG YAOGUANG, HAN HONGWEI, LI XIONG, KU ZHILIANG, LIU LINFENG, XU MI, LIU GUANGHUI
• Format: Patent
• Language: Chinese; English
• Published: 07.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a preparation method of a metal-halide-doped organic hole transporting layer. The preparation method includes: mixing organic hole transporting material and organic solvent to prepare organic hole transporting material solution; mixing metal halide and organic solvent to prepare metal halide dopant solution; mixing the organic hole transporting material solution and the metal halide dopant solution to form mixed solution; and spin-coating a substrate with the mixed solution, and heating and drying to obtain the hole transporting layer. The invention further discloses the organic hole transporting layer prepared by the method, and a solar cell with the organic hole transporting layer. The preparation method is simple. The number of carriers of the prepared organic hole transporting layer is increased, hole mobility and conductivity of the hole transporting layer are increased evidently, energy band position of the hole transporting layer is changed, the hole transporting layer has bett