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A method and an apparatus for forming an amorphous carbon layer on a substrate are provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitr...

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Bibliographic Details
Main Authors KIM BOK-HOEN, MC CLINTOCK WILLIAM H, KONECNI ANTHONY, LIU JOSEPHINE JUHWEI, PADHI DENEESH
Format Patent
LanguageChinese
English
Published 31.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and an apparatus for forming an amorphous carbon layer on a substrate are provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.
Bibliography:Application Number: CN201180055940