Methods of forming a gate cap layer above a replacement gate structure and a semiconductor device that includes such a gate structure and cap layer

Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacem...

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Bibliographic Details
Main Authors GRASSHOFF GUNTER, LABELLE CATHERIN
Format Patent
LanguageChinese
English
Published 24.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacement gate structure and a gate cap layer positioned above the replacement gate structure, wherein the gate cap layer has a bottom surface that corresponds to the dished upper surface of the replacement gate structure.
Bibliography:Application Number: CN2013120347