Methods of forming a gate cap layer above a replacement gate structure and a semiconductor device that includes such a gate structure and cap layer
Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacem...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
24.07.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacement gate structure and a gate cap layer positioned above the replacement gate structure, wherein the gate cap layer has a bottom surface that corresponds to the dished upper surface of the replacement gate structure. |
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Bibliography: | Application Number: CN2013120347 |