Gas distribution system applied to plasma treatment device and verification method thereof

The invention provides a gas distribution system applied to a plasma reaction chamber and a verification method thereof. By adding a bypass channel on one of at least two gas channels, actual flow of the gas channel without the bypass channel is calculated by measuring pressure of a reaction cavity,...

Full description

Saved in:
Bibliographic Details
Main Authors ZHOU XUSHENG, ZHOU JUN, SUN HAIHUI, FAN BAOGUANG
Format Patent
LanguageChinese
English
Published 26.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
MEASURING
MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL
METERING BY VOLUME
PHYSICS
TESTING
Online AccessGet full text

Cover

More Information
Summary:The invention provides a gas distribution system applied to a plasma reaction chamber and a verification method thereof. By adding a bypass channel on one of at least two gas channels, actual flow of the gas channel without the bypass channel is calculated by measuring pressure of a reaction cavity, and a working condition of a gas bypass adjusting device can be judged by comparing an actual measured value with a theoretical measured value after bypassing. The measured value can be high-precision data obtained by measuring on the same channel and can also be obtained by measuring one channel, then measuring output gas flow of a gas supply source or another gas channel and comparing the measured value with a first measured value to offset effects caused by variable quantity such as temperature.
Bibliography:Application Number: CN20111431014