Plasma immersion injection electrode structure
The invention relates to the technical field of plasma immersion injection, in particular to a plasma immersion injection electrode structure. The plasma immersion injection electrode structure sequentially comprises an injection electrode, an insulating layer and a shielding layer from inside to ou...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
19.06.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of plasma immersion injection, in particular to a plasma immersion injection electrode structure. The plasma immersion injection electrode structure sequentially comprises an injection electrode, an insulating layer and a shielding layer from inside to outside. The injection electrode is connected with a bias power supply which supplies bias voltage. The insulating layer is used for isolating and insulating the injection electrode and the shielding layer which is grounded. The plasma immersion injection electrode structure has the advantages of evidently reducing fringe effect in the process of injecting, and thus increasing injection uniformity, and meanwhile reducing sputtering pollution in the process of injecting. |
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Bibliography: | Application Number: CN20111412530 |