Gallium nitride film for solar cell window layer and preparation method thereof

• Main Authors: SONG DIANYOU, FENG SHAOJUN, XUE YUMING, PAN HONGGANG, YIN ZHENCHAO, ZHANG JIAWEI, LIU JUN, ZHU YADONG, LIU HAO, XIN ZHIJUN, YIN FUHONG
• Format: Patent
• Language: Chinese; English
• Published: 12.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a gallium nitride film for a solar cell window layer, wherein the chemical molecular formula of the gallium nitride film is GaN; an indium gallium nitride film is deposited on a substrate; and the thickness of the film is 0.6-1 mu m. A preparation method disclosed by the invention comprises the following steps of: carrying out surface plasma cleaning of the surface of the substrate in a sampling chamber of an MOCVD (Metal Organic Chemical Vapour Deposition) deposition system, and then, depositing a layer of gallium nitride film on the surface of the substrate by adopting an MOCVD process in a deposition chamber of the MOCVD deposition system. The gallium nitride film for the solar cell window layer and the preparation method thereof disclosed by the invention have the advantages that the gallium nitride GaN film has an almost perfect matching band gap corresponding to solar spectrum and has the advantages of being high in absorption coefficient, high in carrier mobility and strong in