Novel multi-layer-structure silicon carbide photoconductive switch and preparation method thereof

• Main Authors: JIANG HAONAN, ZHOU YUMING
• Format: Patent
• Language: Chinese; English
• Published: 05.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a novel multi-layer-structure silicon carbide photoconductive switch and a preparation method of the novel multi-layer-structure silicon carbide photoconductive switch, and belongs to the technical field of wide bandgap semiconductors. The novel multi-layer-structure silicon carbide photoconductive switch comprises a substrate, wherein the substrate is composed of a semi-insulating silicon carbide chip mixed with vanadium or an intrinsic silicon carbide chip, a conductive-type mixed layer is arranged on a silicone surface of the substrate, and the mixing type is N-type. Two conductive-type mixed layers are arranged on a carbon surface of the substrate, the two conductive-type mixed layers are sequentially a second mixed layer and a third mixed layer from inside to outside, the mixing type of the second mixed layer is P-type, the mixing type of the third mixed layer is N-type, an anode of the switch is arranged at one side of the silicone surface, and the cathode of the switch is arrang