Thin-film transistor, method of manufacturing thereof, and display apparatus

The purpose of the present invention is to provide a thin-film transistor which can have both an excellent ON characteristic and an excellent OFF characteristic, and electric characteristics of which will be symmetrical even when exchanging the source electrode and drain electrode thereof. The thin-...

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Bibliographic Details
Main Authors KAWASHIMA TAKAHIRO, HAYASHI HIROSHI, KAWACHI GENSHIROU
Format Patent
LanguageChinese
English
Published 01.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The purpose of the present invention is to provide a thin-film transistor which can have both an excellent ON characteristic and an excellent OFF characteristic, and electric characteristics of which will be symmetrical even when exchanging the source electrode and drain electrode thereof. The thin-film transistor is provided with: a substrate (100); a gate electrode (110); a gate insulation layer (120); a crystalline silicon layer (131) formed on the gate insulation layer (120) that is above the gate electrode (110); an amorphous silicon layer (131) that is formed on the gate insulation layer (120) at both sides of the crystalline silicon layer (131), and the film thickness of which is smaller than the film thickness of the crystalline silicon layer (131); a channel protection layer (140) that is formed on the crystalline silicon layer (131); and a source electrode (171) and a drain electrode (172).
Bibliography:Application Number: CN201180040719