Apparatus and method
The invention is related to an apparatus and a method for processing a surface (4) of a substrate (2) by exposing the surface (4) of the substrate (2) to alternating surface reactions of at least a first starting material (A) and a second starting material (B) according to the principles of atomic l...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
01.05.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The invention is related to an apparatus and a method for processing a surface (4) of a substrate (2) by exposing the surface (4) of the substrate (2) to alternating surface reactions of at least a first starting material (A) and a second starting material (B) according to the principles of atomic layer deposition method. According to the invention a first starting material (A) is fed on the surface (4) of the substrate (2) locally by means of a source (6, 7, 8) by moving the source (6, 7, 8) in relation to the substrate (2), and the surface (4) of the substrate (2) processed with the first starting material (A) is exposed to a second starting material (B) present in the atmosphere (1 ) surrounding the source (6, 7, 8). |
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Bibliography: | Application Number: CN201180041761 |