Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell

• Main Authors: SHI JIANHUA, LIU ZHENGXIN, CUI YANFENG, MENG FANYING, YUAN SHENGZHAO, LU ZHONGDAN
• Format: Patent
• Language: Chinese; English
• Published: 01.05.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a method for increasing the open-circuit voltage of an N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell. According to the method, the N-type substrate HIT solar cell comprises an N-type crystalline silicon substrate layer, a first and a second intrinsic non-crystalline silicon layers, an N-type non-crystalline silicon layer, a P-type non-crystalline silicon layer, a first TCO (Transparent Conductive Oxide) layer and an electrode, and a second TCO layer and an electrode, wherein the first and second intrinsic non-crystalline silicon layers are formed on both sides of the N-type crystalline silicon substrate layer, the N-type non-crystalline silicon layer is formed outside the first intrinsic non-crystalline silicon layer, the P-type non-crystalline silicon layer is formed outside the second intrinsic non-crystalline silicon layer, the first TCO layer and the electrode are formed outside the N-type non-crystalline silicon layer, the second TCO layer and the elec