Backside collector structure of power semiconductor device

• Main Authors: QIU YINGBIN, CHEN HONG, XU CHENGFU, WU KAI, ZHU YANGJUN
• Format: Patent
• Language: Chinese; English
• Published: 01.05.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a backside collector structure of a power semiconductor device. According to the technical scheme provided by the invention, in the backside collector structure of the power semiconductor device, a P conductive-type gallium-nitride layer is arranged on the backside of an N c...