Backside collector structure of power semiconductor device

The invention relates to a backside collector structure of a power semiconductor device. According to the technical scheme provided by the invention, in the backside collector structure of the power semiconductor device, a P conductive-type gallium-nitride layer is arranged on the backside of an N c...

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Bibliographic Details
Main Authors QIU YINGBIN, CHEN HONG, XU CHENGFU, WU KAI, ZHU YANGJUN
Format Patent
LanguageChinese
English
Published 01.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a backside collector structure of a power semiconductor device. According to the technical scheme provided by the invention, in the backside collector structure of the power semiconductor device, a P conductive-type gallium-nitride layer is arranged on the backside of an N conductive-type silicon substrate, and a collector is arranged on the backside of the P conductive-type gallium-nitride layer. According to the invention, a heterojunction structure is manufactured on the backside of the device, so that the injection efficiency is improved, and the conducting voltage drop of the device can be improved; and a heterojunction interface has more defects, so that a recombination center can be formed, and therefore, the service life of current carriers is reduced, and turn-off characteristics are improved.
Bibliography:Application Number: CN2013113013