N-type solar battery and manufacturing method thereof

• Main Authors: LI GAOFEI, HU ZHIYAN, ZHAO WENCHAO, WANG YINGCHAO, XIONG JINGFENG
• Format: Patent
• Language: Chinese; English
• Published: 24.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses an N-type solar battery and a manufacturing method thereof. The method comprises the following steps of: providing an N-type silicon wafer, wherein the front side of the N-type silicon wafer comprises a front grid line area and a front non-grid line area; forming a mask layer on the front side of the N-type silicon wafer, wherein the mask layer can prohibit diffusion of P-type ions; removing the mask layer in the front grid-line area; performing first-time P-type doping on the front side of the N-type silicon wafer, to form a first P-type doping area in the front grid-line region; removing the remaining mask layer, and performing second-time P-type doping on the front side, to form a second P-type doping region in the front non-grid line area, wherein the doping concentration of the second P-type doping region is smaller than that of the first P-type doping region; performing annealing treatment on the N-type silicon wafer; and forming a front electrode structure and a back electrode s