Photoelectric conversion device
A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is prov...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
10.04.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction. |
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Bibliography: | Application Number: CN20121367394 |