Photoconductive switch high in withstand voltage and low in on resistance and method for manufacturing same
The invention provides a method for manufacturing a photoconductive switch high in withstand voltage and low in on resistance, comprising the steps of: providing a semi-insulating substrate, and forming a transparent electrode layer on the semi-insulating substrate; applying a photoresist layer on t...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
03.04.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a method for manufacturing a photoconductive switch high in withstand voltage and low in on resistance, comprising the steps of: providing a semi-insulating substrate, and forming a transparent electrode layer on the semi-insulating substrate; applying a photoresist layer on the transparent electrode layer through spin coating, patterning the transparent electrode layer and forming transparent electrodes at the left and right two ends of the semi-insulating substrate, respectively; applying second photoresist layers on the semi-insulating substrate and the transparent electrode through spin coating, patterning the second photoresist layer and exposing the region for forming a metal electrode; forming the metal electrode which is in contact with the transparent electrodes, respectively, and isolated from the semi-insulating substrate; and removing the second photoresist layers. Accordingly, the invention also provides a photoconductive switch high in withstand voltage and low in on resis |
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Bibliography: | Application Number: CN20111281114 |