Method for monitoring etching process

• Main Authors: ZHAO QIZHONG, QIU ZHIXIN, HE XIAOHENG
• Format: Patent
• Language: Chinese; English
• Published: 03.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method for monitoring an etching process. Firstly, a gas introducing step of introducing the gas which does not react with chemical liquid with a specific composition is introduced into the chemical liquid through a gas pipeline device is carried out, and a first balancing pressure which corresponds with the composition of the chemical liquid is obtained. Then an etching step of placing a wafer semi-finished product to be etched into the chemical liquid is carried out. Then a gas pressure measuring step is carried for recording a second balancing pressure of the wafer semi-finished product after the etching process is finished, and a difference between the gas balancing pressures is calculated in cooperation with a calculating step for obtaining composition change of the chemical liquid after etching. According to the method provided by the invention, etching capability monitoring of the chemical liquid through additional processes such as blanket etching and measuring is no