Multi-wafer rotating disc reactor with inertial planetary drive

• Main Authors: SCANDARIATO JOSEPH, TANG QUINFU, PARANJPE AJIT PRAMOD, CELARU ADRIAN, LUSE TODD ARTHUR
• Format: Patent
• Language: Chinese; English
• Published: 13.02.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Wafer carriers and methods for moving wafers in a reactor. The wafer carrier (220) may include a platen (215) with a plurality of compartments and a plurality of wafer platforms (210). The platen (215) is configured to rotate about a first axis. Each of the wafer platforms (210) is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment (770). The platen (215) and the wafer platforms (210) rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen (215) about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms (210) carried on the platen (215) and carrying the wafers (200) about a respective second axis of rotation and with a different angular velocity than the platen (215) to create planetary motion therebetween.