Method to form interlamination insulation film of semiconductor device
The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N O, O or O , and encroachment caused by H SO boiling or by humidity absorption from the exterior is also removed such that low temperature...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
07.06.1995
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N O, O or O , and encroachment caused by H SO boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850 DEG C is established and an interlayer dielectric film (2) of excellent planarity is formed. |
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Bibliography: | Application Number: CN19921012536 |