Method to form interlamination insulation film of semiconductor device

The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N O, O or O , and encroachment caused by H SO boiling or by humidity absorption from the exterior is also removed such that low temperature...

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Bibliographic Details
Main Authors CHUNG UIN, HONG CHANGKI, KIM CHANGGYU
Format Patent
LanguageEnglish
Published 07.06.1995
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The limit of B and P concentrations is surmounted by changing the surface of borophosphosilicate glass with a surface treatment such as plasma (3) processing of N O, O or O , and encroachment caused by H SO boiling or by humidity absorption from the exterior is also removed such that low temperature reflow process below 850 DEG C is established and an interlayer dielectric film (2) of excellent planarity is formed.
Bibliography:Application Number: CN19921012536