Method for forming an indium (iii) sulfide film
An embodiment of the invention provides a method for forming an indium (III) sulfide film, including providing a mixed solution containing a complexing agent, indium ions, and hydrogen sulfide ions; and contacting the mixed solution with a substrate to form an indium (III) sulfide film thereon, wher...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
16.01.2013
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Subjects | |
Online Access | Get full text |
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Summary: | An embodiment of the invention provides a method for forming an indium (III) sulfide film, including providing a mixed solution containing a complexing agent, indium ions, and hydrogen sulfide ions; and contacting the mixed solution with a substrate to form an indium (III) sulfide film thereon, wherein the complexing agent has the following formula: wherein each of R1 and R2 respectively is hydrogen or hydroxyl. |
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Bibliography: | Application Number: CN20111242427 |