Semiconductor package and fabrication method thereof
Provided are a semiconductor package and a fabrication method thereof. The semiconductor package includes a dielectric layer having opposing first and second surfaces and side surfaces; a copper wiring layer disposed on the first surface of the dielectric layer and having extension pads; a surface p...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
26.12.2012
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Subjects | |
Online Access | Get full text |
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Summary: | Provided are a semiconductor package and a fabrication method thereof. The semiconductor package includes a dielectric layer having opposing first and second surfaces and side surfaces; a copper wiring layer disposed on the first surface of the dielectric layer and having extension pads; a surface processing layer disposed on the wiring layer; a semiconductor chip disposed on the wiring layer and electrically connected to the surface processing layer; and an encapsulant disposed on the first surface of the dielectric layer for encapsulating the semiconductor chip, the wiring layer and the surface processing layer while exposing the second surface of the dielectric layer. Further, vias are disposed between the side surfaces of the dielectric layer and the encapsulant such that the extension pads are exposed from the vias so as for solder balls to be disposed thereon. Due to improved electrical connection between the copper and solder materials, the electrical connection quality of the package is improved. |
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Bibliography: | Application Number: CN20111193715 |