Method for improving static random access memory reading redundancy

• Main Author: YU LIUJIANG
• Format: Patent
• Language: English
• Published: 18.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PHYSICS; SEMICONDUCTOR DEVICES

The invention provides a method for improving static random access memory reading redundancy. The method comprises the following process steps: firstly, generating an NMOS (N-channel metal oxide semiconductor) polysilicon gate prefilling photoetching plate on a pattern board; then carrying out the f...