Infrared detector sensing element based on black silicon absorption layer and multilayer combination membrane structure

• Main Authors: LIANG TING, ZHANG WENDONG, XIONG JIJUN, LIU JUN, SHI YUNBO, XUE CHENYANG, PEI XIANGDONG, TAN QIULIN, ZHANG BINZHEN
• Format: Patent
• Language: Chinese; English
• Published: 19.12.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a sensing element of an infrared gas detector, and concretely relates to an infrared detector sensing element based on a black silicon absorption layer and a multilayer combination membrane structure. The infrared detector sensing element increases the detection performance of a pyroelectric thin film type infrared gas detector. The infrared detector sensing element comprises an infrared sensitive absorbed layer, an upper electrode, a pyroelectric film combination layer, a lower electrode, a thermal insulation layer, a high thermal impedance substrate from top to down, the infrared sensitive absorbed layer is the black silicon absorption layer possessing a conical forest morphology structure, the pyroelectric film combination layer is a PT/PZT/PT-PT/PZT/PT multilayered film structure which is alternatively arranged by several layers of PT films and PZT films; the structure and the processing technology are reasonable, the infrared detector sensing element has good heat absorption perf