Trench MOS (Metal Oxide Semiconductor) transistor and manufacture method thereof, and integrated circuit

• Main Authors: WU YAZHEN, LIU XIANZHOU
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a trench MOS (Metal Oxide Semiconductor) transistor and a manufacture method thereof, and an integrated circuit. The trench MOS transistor comprises an epitaxial layer, a trench region and a source terminal which are sequentially formed on the front of a substrate, wherein a polysilicon gate is positioned in trenches of the trench region and the epitaxial layer, and gate oxide layers are enclosed on the side surface and the bottom surface of the polysilicon gate. The trench MOS transistor also comprises a drain terminal formed on the back surface of the substrate, wherein a polysilicon gate metal silicide layer is formed on the surface of the polysilicon gate, which has the same plane with the trenches. According to the trench MOS transistor, the polysilicon gate metal silicide layer is added on the surface of the polysilicon gate, thus the resistance of a gate structure is effectively lowered, and the power consumption, especially power consumption when the trench MOS transistor is use