Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line

• Main Authors: FANG WENQING, LIU MIYU, JIANG FENGYI
• Format: Patent
• Language: Chinese; English
• Published: 14.11.2012
• Subjects: COLORIMETRY; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; PHYSICS; RADIATION PYROMETRY; TESTING

The invention discloses a spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line. The spectrum device for measuring LED epitaxial wafer photoluminescence on line comprises a reaction chamber and a control system, an MOCVD (metal organic chemical vapor deposition) heater, a graphite substrate base, an epitaxial wafer and an MOCVD spray nozzle are installed in the reaction chamber. The device for measuring LED epitaxial wafer photoluminescence spectra on line is characterized in that a quartz rod and a quartz outer sleeve are installed in a quartz rod hole of the MOCVD spray nozzle; a laser optical fiber is connected between a laser device and a laser emission collimation head; a multiplex optical fiber is connected between an excitation receiving collimation head and the quartz rod; a spectrum optical fiber is connected between a spectrum collimation head and an optical fiber spectrometer; and the control system controls the reaction chamber, the laser device and the