Method for fast forming P-N junctions on N-type silicon substrate

• Main Author: CHEN YAN
• Format: Patent
• Language: Chinese; English
• Published: 24.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a method for fast forming P-N junctions on an N-type silicon substrate. The method comprises the following steps of 1) pretreating silicon chips; 2) dispersing a boron source to fast form a P-type emitting junction; 3) corroding single surface P-type emitting junctions by acid corrosive solution or corrosive slurry; 4) generating a SiO2 membrane by a thermal oxidation method; 5) corroding non-emitting surface SiO2 by acid corrosive solution or corrosive slurry; 6) dispersing a phosphorus source to form an N-type front surface field; 7) removing phosphorosilicate glass (PSG) and partial SiO2 by HF acid; 8) performing PECVD (plasma enhanced chemical vapor deposition) for 50-80 nm SiNx at the front side; and 9) printing Ag slurry at the front side and drying the printed Ag slurry; printing AgAl slurry at the back surface, and sintering the printed AgAl slurry. The method provided by the invention can be used for greatly shortening the process time for dispersing the boron, optimizing the