LED (light emitting diode) with transparent conductive layer and fabrication method thereof

The invention discloses a transparent conductive layer, a fabrication method, and the application of the transparent conductive in the LED. The LED comprises a substrate, a light emitting epitaxial layer formed on the substrate, and the transparent conductive layer formed on the light emitting epita...

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Bibliographic Details
Main Authors WANG DUXIANG, DONG ZHONGWEI, DAI JINGFU, LIN SHIWEI, CAI WENBI, LIN KECHUANG
Format Patent
LanguageChinese
English
Published 17.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a transparent conductive layer, a fabrication method, and the application of the transparent conductive in the LED. The LED comprises a substrate, a light emitting epitaxial layer formed on the substrate, and the transparent conductive layer formed on the light emitting epitaxial layer, wherein the light emitting epitaxial layer consists of a first confinement layer, a light emitting layer and a second confinement layer. The LED is characterized in that the transparent conductive layer includes a first ITO (indium tin oxide) layer and a second ITO layer; the first ITO layer is formed on the light emitting epitaxial layer and distributed in an incompletely continuous film state; and the second ITO layer is formed on the first ITO layer, and is superior to the first ITO layer in the compactness.
Bibliography:Application Number: CN20121238130