Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting in-situ arcing events in a plasma processing chamber

A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to meas...

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Bibliographic Details
Main Authors KEIL DOUGLAS L, BOOTH JEAN-PAUL
Format Patent
LanguageEnglish
Published 22.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.
Bibliography:Application Number: CN200980126995