Treatment method for removal of PN (P-type semiconductor and N-type P-type semiconductor) junction on abnormal silicon chip before single crystal semi-finished product printing

• Main Authors: LU XIAOYA, DOU XIAOBO, ZHAN SHIFEI, YANG HUAIJIN
• Format: Patent
• Language: Chinese; English
• Published: 03.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a treatment method for removal of a PN (P-type Semiconductor and N-type P-type Semiconductor) junction on an abnormal silicon chip before single crystal semi-finished product printing, which comprises the following steps of: removing a silicon nitride film on the silicon chip by using hydrofluoric acid aqueous solution with a volume percentage of 8-10 percent; and removing the P/N junction on the abnormal silicon chip by using sodium hydroxide, alcohol and floss-making additive and carrying out secondary floss-making. The treatment method has the beneficial effect that the silicon nitride film and the P/N junction on the abnormal silicon chip can be effectively removed.