Magnetic random access memory and manufacturing method thereof

According to one embodiment, there is disclosed a magnetic random access memory comprising: a semiconductor substrate; a selective transistor formed at the surface region of the semiconductor substrate and having a gate electrode, a gate insulating film, a source and a drain; and a magnetoresistive...

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Bibliographic Details
Main Author NOMACHI AKIKO
Format Patent
LanguageEnglish
Published 22.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:According to one embodiment, there is disclosed a magnetic random access memory comprising: a semiconductor substrate; a selective transistor formed at the surface region of the semiconductor substrate and having a gate electrode, a gate insulating film, a source and a drain; and a magnetoresistive element formed on the drain including a magnetic storage layer in which a magnetization direction is variable, a magnetic reference layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetic storage layer and the magnetic reference layer.
Bibliography:Application Number: CN201110274938