Stress adjusting method used in manufacturing process of indium-gallium-aluminum-nitrogen-based light emitting device

• Main Authors: JIANG FENGYI, ZHAO HANMIN, XIONG CHUANBING
• Format: Patent
• Language: Chinese; English
• Published: 25.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a stress adjusting method used in the manufacturing process of an indium-gallium-aluminum-nitrogen-based light emitting device, and relates to an indium-gallium-aluminum-nitrogen-based semi-conductor light emitting device. The method is used for releasing and adjusting the stress of an indium-gallium-aluminum-nitrogen thin film, so that the photoelectric performance and the reliability of the device are improved. The method comprises the following steps: the indium-gallium-aluminum-nitrogen thin film is formed on a growth substrate; a stress adjusting rib is formed on the indium-gallium-aluminum-nitrogen thin film, wherein the stress adjusting rib is imaged, and the expansion coefficient of the stress adjusting rib is smaller than or larger than that of the indium-gallium-aluminum-nitrogen thin film, and due to the stress adjusting rib, the changing trend of the stress to the indium-gallium-aluminum-nitrogen thin film caused by the subsequent processing can be weakened. The imaged stre