Method of erasing a flash eeprom memory

A method for erasing a flash EEPROM memory device is disclosed. The method includes: a first voltage bias of positive polarity applied across a well electrode and a second semiconductor region during -F/N channel through a tube and a second voltage bias of negative polarity applied across a control...

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Bibliographic Details
Main Authors JUI HUNG HUANG, LEE Z. WANG
Format Patent
LanguageChinese
English
Published 18.07.2012
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method for erasing a flash EEPROM memory device is disclosed. The method includes: a first voltage bias of positive polarity applied across a well electrode and a second semiconductor region during -F/N channel through a tube and a second voltage bias of negative polarity applied across a control grid electrode; a third voltage bias of positive polarity applied across a well electrode and a second semiconductor region during disfigurement reduces after period of -F/N channel tunneling and a first zero voltage bias of positive polarity applied across the control grid electrode; a fourth voltage bias of negative polarity applied across the control grid electrode during disfigurement auxiliary tunneling after disfigurement reduces and a second zero voltage bias applied across a well electrode and a second semiconductor region.
Bibliography:Application Number: CN201210010287