Antifeflective composition for photoresists
The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, wherein X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) mo...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
11.07.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, wherein X is a linking moiety selected from a nonaromatic (A) moiety, aromatic (P) moiety and mixture thereof, R' is a group of structure (2), R'' is independently selected from hydrogen, a moiety of structure (2), Z and W-OH, wherein Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbylene linking moiety, and, Y' is independently a (C1-C20) hydrocarbylene linking moiety, wherein structure (2) is shown in the description, where R1 and R2 are independently selected from H and C1-C4alkyl and L is an organic hydrocarbyl group. The invention further relates to a process for imaging the antireflective coating composition. |
---|---|
Bibliography: | Application Number: CN2010845299 |