Semiconductor Light Emitting Element
The present invention discloses a semiconductor light emitting element. According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting li...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
11.07.2012
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention discloses a semiconductor light emitting element. According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more. |
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Bibliography: | Application Number: CN201110266714 |