Laminated silicon base hetero-junction solar battery

• Main Authors: YU DONGDONG, DONG KEYAN
• Format: Patent
• Language: Chinese; English
• Published: 11.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The present invention relates to a laminated silicon base hetero-junction solar battery, comprising a c-Si ( p ) matrix, wherein an nc-Si:H(i) layer is deposited on the front surface of the c-Si(p) matrix, an a-Si:H(n+) layer is deposited on the front surface of the nc-Si:H(i) layer, the thickness of the nc-Si:H(i) layer is 3-5nm, the thickness of the a-Si:H(n+) layer is 10-15nm, an a-Si:H(i) layer is deposited on the back of the c-Si(p) matrix, an nc-Si(p+) layer is deposited on the back of the a-Si:H(i) layer, the thickness of the a-Si:H(i) layer is 3-5nm and the thickness of the nc-Si(p+) layer is 10-15nm. The optical attenuation effect of the amorphous silicon is reduced, the band gap abrupt structure between the crystal silicon and amorphous silicon is changed, the passivation effect of the laminated battery is increased, the efficiency of the battery is increased, the industrialization is facilitated and the production is convenient.