Structures and methods for data reading apparatus and reading out non-volatile memory using referencing cells

• Main Authors: WANG LEE Z, HUANG SHR-TSAI
• Format: Patent
• Language: Chinese; English
• Published: 11.07.2012
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The structures and methods of a data reading apparatus and reading out semiconductor Non-Volatile Memory (NVM) using referencing cells are disclosed. The data reading apparatus comprises: -a sensing amplifier, which is used for sensing the sensing amplifier. -a first carry-in terminal and -a second carry-in terminal. The voltage difference between the first and second carry-in terminal. -a first capacitor and a second capacitor, connected with the first and second carry-in terminal respectively. The first capacitor and the second capacitor make an electrical discharge by reading a NVM unit and referencing a NVM unit when a grid bias is inflicted across control grids of a reading NVM unit and a referencing NVM unit simultaneously. And capacitance value of the first capacitor and the second capacitor is same materially. The new invented scheme can reduce large current consumption from the direct current biasing in the conventional scheme.