Method for monitoring gate groove etching

The invention discloses a method for monitoring gate groove etching. The method comprises the following steps of: preparing an actual concave gate groove device and preparing at least two referenced concave gate groove devices with the same source/drain region parameters, wherein the gate length siz...

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Bibliographic Details
Main Authors WEI KE, PENG MINGZENG, ZHENG YINGKUI, LIU XINYU, LIU GUOGUO
Format Patent
LanguageChinese
English
Published 30.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:The invention discloses a method for monitoring gate groove etching. The method comprises the following steps of: preparing an actual concave gate groove device and preparing at least two referenced concave gate groove devices with the same source/drain region parameters, wherein the gate length sizes of at least two referenced concave gate groove devices are located at two sides of the gate length size of the actual concave gate groove device; testing to obtain transfer characteristics of at least two referenced concave gate groove devices; and judging gate groove etching conditions of the actual concave gate groove device through the transfer characteristics of at least two referenced concave gate groove devices. According to the method provided by the invention, whether the actual concave gate groove device is effectively etched or not can be reliably obtained and the etching result of this time can be used as an evidence of etching of the next time.
Bibliography:Application Number: CN20101574009